An organic charge trapping memory transistor with bottom source and drain contacts
article
We present an organic charge trapping memory transistor with lithographically defined bottom source and drain contacts. This device can be written and erased at voltages as low as 15 V. More than 500 write and erase cycles and the retention of the trapped charge over more than three months are shown, demonstrating the possibilities of this device as a reprogramable nonvolatile organic memory element. © 2009 American Institute of Physics.
TNO Identifier
461648
ISSN
0003-6951
Source
Applied Physics Letters, 95(10)
Article nr.
103311
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