Tunable injection barrier in organic resistive switches based on phase-separated ferroelectric-semiconductor blends
article
Organic non-volatile resistive bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers are fabricated. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-electrode contact and, hence, the resistance of the comprising diodes. Comparison between the on- and off-current of the switching diodes, with the current measured for semiconductor-only diodes reveals that the switching occurs between bulk-limited, i.e., space-chargelimited, and injection-limited current transport. By deliberately varying the HOMO energy of the semiconductor and the work-function of the metal electrode, it is demonstrated that injection barriers up to 1.6eV can be surmounted by the ferroelectric polarization yielding on/off current modulations of more than five orders of magnitude. The exponential dependence of the current modulation with a slope of 0.25 eV/decade is rationalized by the magnitude of the injection barrier. © 2009 WILEY-VCH Verlag GmbH & Co. KCaA.
Topics
BistablesCurrent modulationCurrent transportElectrode contactsExponential dependenceFerroelectric polarizationHOMO energiesInjection barriersMetal electrodesNon-volatileOff-currentOrders of magnitudePolarization fieldSwitching diodesFerroelectricityOrganic polymersPolarizationSemiconducting polymersSemiconductor switchesSemiconductor diodes
TNO Identifier
461641
ISSN
1616301X
Source
Advanced Functional Materials, 19(19), pp. 3173-3178.
Pages
3173-3178
Files
To receive the publication files, please send an e-mail request to TNO Repository.