Organic nonvolatile memory devices based on ferroelectricity

article




Naber, R.C.G.

Asadi, K.

Blom, P.W.M.

Leeuw, D.M. de

Boer, B. de
A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.
Topics












Electronic devicesFerroelectric capacitorsMemory arrayOrganic non-volatile memory devicesFerroelectricityField effect transistorsNonvolatile storageOrganic compoundEquipment designComputer Storage DevicesMagneticsOrganic ChemicalsSignal Processing, Computer-Assisted
TNO Identifier
461596
Repository link
https://resolver.tno.nl/uuid:775c3b7c-4fdf-4de7-baef-f4a0bdcc6623
ISSN
09359648
Source
Advanced Materials, 22(9), pp. 933-945.
Collation
14 p.
Pages
933-945
Files
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