Enhancement of the hole injection into regioregular poly(3-hexylthiophene) by molecular doping

article

Zhang, Y.

Blom, P.W.M.
The hole injection in Schottky barriers formed between p -type doped regioregular poly(3-hexylthiophene-2,5-diyl) (rr-P3HT) and silver (Ag) is investigated. The rr-P3HT is controllably doped using the acceptor 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ). We demonstrate that only one order of magnitude increase in the background hole density p 0, from 2× 1016 to 2× 1017 cm-3, enhances the hole injection with two orders of magnitude. The hole injection barrier is lowered by 0.5 eV and exhibits a linear dependence on p0, which can be explained by doping induced surface charges.
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F4-TCNQHole densitiesHole injectionHole injection barriersLinear dependenceMolecular dopingOrders of magnitudePoly (3-hexylthiophene)Regio-regularRR-P3HTSchottky barriersTetracyanoquinodimethaneCarrier mobilityDoping (additives)Hole trapsSchottky barrier diodesElectron injection
TNO Identifier
461560
Repository link
https://resolver.tno.nl/uuid:1993b673-bb20-4fce-a915-65127ea31702
ISSN
0003-6951
Source
Applied Physics Letters, 97(8)
Article nr.
083303
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