Characterization of epitaxial Pb(Zr,Ti)O3 thin films deposited by pulsed laser deposition on silicon cantilevers
article
This paper reports on the piezoelectric-microelectromechanical system micro-fabrication process and the behavior of piezoelectric stacks actuated silicon cantilevers. All oxide layers in the piezoelectric stacks, such as buffer-layer/bottom-electrode/film/top-electrode: YSZ/SrRuO\3/Pb(Zr, Ti)\3/SrRuO\3, were grown epitaxially on the Si template of silicon-on-insulator substrates by pulsed laser deposition. By using an analytical model and finite element simulation, the initial bending of the cantilevers was calculated. These theoretical analyses are in good agreement with the experimental results which were determined using a white light interferometer. The dependences of the cantilever displacement, resonance frequency and quality factor on the cantilever geometry have been investigated using a laser-Doppler vibrometer. The tip displacement ranged from 0.03 to 0.42 μm V?1, whereas the resonance frequency and quality factor values changed from 1010 to 18.6 kHz and 614 to 174, respectively, for the cantilevers with lengths in the range of 100-800 μm. Furthermore, the effect of the conductive oxide electrodes on the stability of the piezoelectric displacement of the cantilevers has been studied. © 2010 IOP Publishing Ltd.
Topics
Analytical modelCantilever displacementConductive oxidesFinite element simulationsInitial bendingLaser dopplerMicro electro mechanical systemOxide layerPb(Zr , Ti)OPiezoelectric stackQuality factorsResonance frequenciesSilicon cantileverSilicon-on-insulator substratesTip displacementVibrometersWhite-light interferometerAtomic force microscopyComputer simulationDepositionElectrodesFinite element methodLeadMathematical modelsMEMSMicroelectromechanical devicesNanocantileversNatural frequenciesPiezoelectricityPulsed laser depositionSemiconducting silicon compoundsZirconiumPulsed lasers
TNO Identifier
461550
ISSN
09601317
Source
Journal of Micromechanics and Microengineering, 20(8)
Article nr.
No.: 085022
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