Crossbar memory array of organic bistable rectifying diodes for nonvolatile data storage
article
Cross-talk in memories using resistive switches in a cross-bar geometry can be prevented by integration of a rectifying diode. We present a functional cross bar memory array using a phase separated blend of a ferroelectric and a semiconducting polymer as storage medium. Each intersection acts simultaneously as a bistable rectifying diode. A logic table of a 4-bit memory and integration into a 3×3 cross bar array are demonstrated. The most difficult state, a high resistance bit completely surrounded by low resistance bits could be unambiguously identified.
Topics
TNO Identifier
461542
ISSN
0003-6951
Source
Applied Physics Letters, 97(19)
Article nr.
193308
Files
To receive the publication files, please send an e-mail request to TNO Repository.