Conductance switching in organic ferroelectric field-effect transistors
article
Staggered bottom-contact top-gate organic ferroelectric field-effect transistors are fabricated with poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) as ferroelectric gate and poly[bis(4-phenyl)(2,4,6- trimethylphenyl)amine] as semiconductor. Polarization reversal of the ferroelectric gate is monitored by displacement transients in the gate current. By varying both the source and drain biases and by using fully and partially polarized transistors, we show that conductance switching only requires polarization of P(VDF-TrFE) at the source electrode. Polarization at the drain is irrelevant and does not impede charge extraction. © 2011 American Institute of Physics.
Topics
Bottom-contactCharge extractionConductance switchingFerroelectric field effect transistorsFerroelectric gateGate currentPolarization reversalsPoly(vinylidene fluoride-trifluoroethylene)Source and drainsTop-gateFerroelectric devicesFerroelectricityPolarizationPower qualityTransistorsOrganic field effect transistors
TNO Identifier
461440
ISSN
0003-6951
Source
Applied Physics Letters, 99(5)
Article nr.
No.: 053306
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