Optical detection of deep electron traps in poly(p-phenylene vinylene) light-emitting diodes

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Kuik, M.

Vandenbergh, J.

Goris, L.

Begemann, E.J.

Lutsen, L.

Vanderzande, D.J.M.

Manca, J.V.

Blom, P.W.M.
The trap-limited electron currents in poly(p-phenylene vinylene) (PPV) derivatives can be modeled using a Gaussian trap distribution that is positioned approximately 0.75 eV below the lowest unoccupied molecular orbital (LUMO) of PPV. Photothermal deflection spectroscopy measurements and internal photo-emission spectroscopy measurements confirm the claim of a Gaussian shaped trap distribution centered at 0.75 eV below the LUMO of PPV. Additionally, two PPV derivatives that differ in the number of conformational defects incorporated during synthesis exhibit identical electron trapping behavior, showing that the traps do not originate from extrinsic impurities of the synthesis or defects in the polymer chains. © 2011 American Institute of Physics.
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Conformational defectsDeep electron trapsElectron currentsElectron trappingGaussiansLowest unoccupied molecular orbitalOptical detectionPhotothermal deflection spectroscopyPoly(p-phenylene vinylene) derivativesPoly(p-phenylenevinylene)Polymer chainsPPV derivativesSpectroscopy measurementsTrap distributionsDefectsElectron trapsEmission spectroscopyLight emitting diodesMolecular orbitalsAromatic compounds
TNO Identifier
461404
Repository link
https://resolver.tno.nl/uuid:74174c0c-30a5-44fd-abe6-e4bf1319b43a
ISSN
0003-6951
Source
Applied Physics Letters, 99(18)
Article nr.
No.: 183305
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