Sensitivity enhancement of metal oxide thin film transistor with back gate biasing
conference paper
In this work, a room-temperature sensing device for detecting carbon monoxide using a ZnO thin film is presented. The ZnO layer (thickness close to the Debye length), which has a polycrystalline structure, is deposited with atomic-layer deposition (ALD) on an Al2O3/Si substrate. The operating principle of the sensor is based on measuring resistance change of the ZnO thin film upon exposure to CO in ambient environment. The ZnO-based sensor shows a large response to low CO concentrations ranging from 5 to 25 ppm in air with 40% relative humidity at room temperature. Results show that the sensitivity of the sensor to CO at room temperature can be modulated with a back gate voltage. © 2011 Published by Elsevier Ltd.
Topics
Atomic layer depositionBack gateCarbon monoxideRoom temperatureZnOAmbient environmentBack gatesBack-gate biasingBackgate voltageCO concentrationsDebye lengthMetal oxide thin filmsOperating principlesPolycrystalline structureResistance changeRoom temperatureSensing devicesSensitivity enhancementsZnOZnO layersZnO thin filmAtomic layer depositionCarbon monoxideCrystal atomic structureMetallic compoundsMetallic filmsOptical filmsSensorsThin film transistorsZinc oxideField effect transistors
TNO Identifier
461376
ISSN
18777058
Source title
25th Eurosensors Conference, 4 September 2011 through 7 September 2011, Athens
Pages
112-115
Files
To receive the publication files, please send an e-mail request to TNO Repository.