Effect of n-type doping on the hole transport in poly(p-phenylene vinylene)

article



Lu, M.

Nicolai, H.T.

Wetzelaer, G.J.A.H.

Blom, P.W.M.
N-type doping of poly(2-methoxy-5-(2′-ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV) with decamethylcobaltocene (DMC) strongly improves the electron transport due to filling of the electron traps. Unexpectedly, the n-type doping simultaneously suppresses the hole transport in MEH-PPV. We demonstrate that this strong reduction of the hole transport originates from unionized DMC molecules that act as hole traps. This hole trapping effect explains why the current of a DMC-doped MEH-PPV polymer light-emitting diode is orders of magnitude lower than that of the undoped device. © 2011 Wiley Periodicals, Inc.
Topics






















charge transportmolecular dopingorganic semiconductorspolymer light-emitting diodesElectron transportHole transportsHole trappingMEH-PPVMolecular dopingn-Type dopingOrders of magnitudeOrganic semiconductorP-phenylene vinylenePoly(p-phenylenevinylene)polymer light-emitting diodesAromatic compoundsHole mobilityHole trapsLight emissionOrganic light emitting diodes (OLED)QuenchingSemiconductor diodesSemiconductor doping
TNO Identifier
461359
Repository link
https://resolver.tno.nl/uuid:a04d1008-be7f-46a8-893c-bae18c23b0e5
ISSN
08876266
Source
Journal of Polymer Science, Part B: Polymer Physics, 49(24), pp. 1745-1749.
Pages
1745-1749
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