The operational mechanism of ferroelectric-driven organic resistive switches
article
The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic electrode into the organic semiconductor, switching the diode from injection limited to space charge limited. The modeling rationalizes the previously observed exponential dependence of the on/off ratio on injection barrier height. We find a lower limit of about 50 nm for the feature size that can be used in a crossbar array, translating into a rewritable memory with an information density of the order of 1 Gb/cm2. © 2011 Elsevier B.V. All rights reserved.
Topics
Charge transportData storageFerroelectric nanostructuresOrganic semiconductorsThin filmsCrossbar arraysData storageExponential dependenceFeature sizesFerroelectric nanostructuresFerroelectric phaseInformation densityInjection barriersLower limitsMemory elementMetallic electrodesOn/off ratioOperational mechanismOrganic semiconductorRewritable memorySpace-charge limitedStray fieldSwitching mechanismCharge transferLogic circuitsSemiconducting organic compoundsThin filmsFerroelectricity
TNO Identifier
461347
ISSN
15661199
Source
Organic Electronics: physics, materials, applications, 13(1), pp. 147-152.
Pages
147-152
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