Characterization and modeling of atomic layer deposited high-density trench capacitors in silicon

article




Matters-Kammerer, M.K.

Jinesh, K.B.

Rijks, T.G.S.M.

Roozeboom, F.

Klootwijk, J.H.
A detailed electrical analysis of multiple layer trench capacitors fabricated in silicon with atomic-layer-deposited Al 2O 3 and TiN is presented. It is shown that in situ ozone annealing of the Al 2O 3 layers prior to the TiN electrode deposition significantly improves the electric properties of the devices such as the dielectric constant, leakage current, and the breakdown voltage of the devices. The self-inductance and self-resistance of the capacitors as derived from S-parameter measurements up to 10 GHz are very small, as low as 4 pH and 6 mΩ for 19.1 mm 2 electrode surface. These data are shown to be consistent with a theoretical model. © 2012 IEEE.
Topics









3-D siliconatomic-layer deposition (ALD)equivalent series inductance (ESL)equivalent series resistance (ESR)Fowler-Nordheim (FN) tunnelinghigh density capacitorshigh-k dielectricsmacropore arraysmetal-insulator-metal (MIM)silicon devices
TNO Identifier
460455
Repository link
https://resolver.tno.nl/uuid:ca257a6d-62c2-49f5-a56d-8cec9dc09d8e
ISSN
08946507
Source
IEEE Transactions on Semiconductor Manufacturing, 25(2), pp. 247-254.
Article nr.
No.: 6129442
Pages
247-254
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