A 6b 10MS/s current-steering DAC manufactured with amorphous Gallium-Indium-Zinc-Oxide TFTs achieving SFDR > 30dB up to 300kHz
conference paper
Amorphous Gallium-Indium-Zinc-Oxide (GIZO or IGZO) has been recently proposed [1] as an interesting semiconductor for manufacturing TFTs because of its mobility (μ∼20cm 2/Vs), superior to other common materials for large-area electronics like organic semiconductors and a-Si (μ∼1cm 2/Vs). The amorphous nature of GIZO grants also a good uniformity, contrary to Low Temperature Polycrystalline Silicon (LTPS), which still offers the best mobility among large-area TFT technologies (μ∼100cm 2/Vs). The optical transparency and the relatively low fabrication temperature (<150°C) make this technology especially suitable for display backplanes and relative driving electronics [2], as well as for any kind of large-area applications on plastic foils, e.g. biomedical sensors, non-volatile memories [3], RFIDs [4], etc. © 2012 IEEE.
TNO Identifier
460453
ISSN
01936530
ISBN
9781467303736
Article nr.
No.: 6177028
Source title
59th International Solid-State Circuits Conference, ISSCC 2012, 19 February 2012 through 23 February 2012, San Francisco, CA, USA
Pages
314-315
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