Charge trapping by self-assembled monolayers as the origin of the threshold voltage shift in organic field-effect transistors

article






Gholamrezaie, F.

Andringa, A.M.

Roelofs, W.S.C.

Neuhold, A.

Kemerink, M.

Blom, P.W.M.

Leeuw, D.M. de
The threshold voltage is an important property of organic field-effect transistors. By applying a self-assembled monolayer (SAM) on the gate dielectric, the value can be tuned. After electrical characterization, the semiconductor is delaminated. The surface potentials of the revealed SAM perfectly agree with the threshold voltages, which demonstrate that the shift is not due to the dipolar contribution, but due to charge trapping by the SAM.
Topics




Organic field-effect transistorsOrganosilanesScanning Kelvin-probe microscopySelf-assemblyThreshold voltage
TNO Identifier
446459
Repository link
https://resolver.tno.nl/uuid:44bbeb42-826c-4db6-8274-075f57181970
ISSN
16136810
Source
Small, 8(2), pp. 241-245.
Collation
5 p.
Pages
241-245
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