Organic thin-film transistors with anodize gate dielectric patterned by self-aligned embossing on flexible substrates
article
An upscalable, self-aligned patterning technique for manufacturing high-performance, flexible organic thin-film transistors is presented. The structures are self-aligned using a single-step, multi-level hot embossing process. In combination with defect-free anodized aluminum oxide as a gate dielectric, transistors on foil with channel lengths down to 5 um are realized with high reproducibility. Resulting on-off ratios of 4 x 10 6 and mobilities as high as 0.5 cm2 V-1 s-1 are achieved, indicating a stable process with potential to large-area production with even much smaller structures.
TNO Identifier
446192
Source
Advanced Functional Materials
Article nr.
201102266
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