N-type doping of poly(p-phenylene vinylene) with air-stable dopants
article
The electron transport in poly(p-phenylene vinylene) (PPV) derivatives blended with the air-stable n-type dopant (4-(1,3-dimethyl-2,3-dihydro-1H- benzoimidazol-2-yl)phenyl)dimethylamine (N-DMBI) is investigated. This dopant is activated after thin film deposition by annealing and strongly enhances the electron transport due to filling of electron traps as well as donation of free electrons to the lowest unoccupied molecular orbital (LUMO) of PPV. As a result, the electron current in a doped device exceeds the trap-free hole current. The total generated free electron density in the LUMO by the dopant typically amounts to 10 23m -3.
TNO Identifier
445744
ISSN
1941420X
Source
Applied Physics Letters: Organic Electronics and Photonics, 4(10)
Article nr.
173302
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