Polymer light-emitting diodes with doped hole-transport layers

article






Lu, M.

Nicolai, H.T.

Kuik, M.

Wetzelaer, G.J.A.H.

Wildeman, J.

Palmaerts, A.

Blom, P.W.M.
We demonstrate a solution processed bi-layer PLED based on poly(p-phenylene vinylene) derivatives using orthogonal solvents. To lower the voltage drop the hole transport layer (HTL) based on poly[2,5-bis(2-ethylhexyloxy)-co-2,5- bis(butoxy)-1,4-phenylenevinylene] (BEH/BB-PPV (1:3)) is doped with tetracyano-tetrafluoro-quinodimethane (F4TCNQ). The conductivity of BEH/BB-PPV (1:3) was observed to increase by two orders of magnitude upon doping with F4TCNQ. The doped HTL was observed to lower the operating voltage of a double layer PLED, but suffers from additional quenching by the dopant at higher voltages due to the lack of an electron blocking functionality. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Topics



















Hole-transport layerLight-emitting diodesPoly(phenylenevinylenes)PolymersBi-layerDouble layersElectron blockingF4-TCNQHole transport layersOperating voltageOrders of magnitudePoly(p-phenylene vinylene) derivativesPolymer light-emitting diodesSolution-processedVoltage dropFunctional polymersLight emissionLight emitting diodesQuenchingDoping (additives)
TNO Identifier
443015
Repository link
https://resolver.tno.nl/uuid:e071a8ce-5b0a-458a-9d6b-b6cd9d58954d
ISSN
18626300
Source
Physica Status Solidi A: Applications and Materials, 208(10), pp. 2482-2487.
Collation
6 p.
Pages
2482-2487
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