Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors
article
We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By modifying Ag electrodes with a perfluorinated monolayer an injection barrier as high as 1.6 eV into poly(9,9-dioctylfluorene) can be surmounted, enabling the measurement of the saturated field-effect mobility of 6 × 10-5 cm2 V-1 s-1. © 2011 Elsevier B.V. All rights reserved.
Topics
Charge injectionOrganic field-effect transistorSelf-assembled monolayerAg electrodeCurrent modulationField-effect mobilitiesInjection barriersPoly(9 ,9-dioctylfluorene)SamsSource and drain electrodesTop-gateUpper surfaceDrain currentElectrodesOrganic polymersSelf assembled monolayersTransistorsOrganic field effect transistors
TNO Identifier
442971
ISSN
03796779
Source
Synthetic Metals, 161(21-22), pp. 2226-2229.
Collation
4 p.
Pages
2226-2229
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