A 10 GHz Integrated Single Sideband Upconverter in 0.25 μm BiCMOS Technology
conference paper
An 8 - 10 GHz linearised single-sideband Gilbert
upconversion mixer is demonstrated in silicon BiCMOS
technology. The QuBiC4X 0.25 μm BiCMOS process of NXP has
been used. The device has an integrated local oscillator driver
with polyphase quadrature generation. The IF chain uses
feedback, selectable gain settings and DC offset circuitry to be
compatible with more than one type of direct digital synthesizer
and to minimize spurious products that are not cancelled by the
mixer concept. The device has sideband suppression of over
45 dB and third-order spurious suppression of over 40 dB.
upconversion mixer is demonstrated in silicon BiCMOS
technology. The QuBiC4X 0.25 μm BiCMOS process of NXP has
been used. The device has an integrated local oscillator driver
with polyphase quadrature generation. The IF chain uses
feedback, selectable gain settings and DC offset circuitry to be
compatible with more than one type of direct digital synthesizer
and to minimize spurious products that are not cancelled by the
mixer concept. The device has sideband suppression of over
45 dB and third-order spurious suppression of over 40 dB.
TNO Identifier
441917
Source title
14th European Microwave Week 2011, EuMW2011: Wave to the future - Proceedings of the 6th European Microwave Integrated Circuits Conference, EuMIC 2011, 9-14 October 2011, Manchester, UK
Pages
562-565
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