Dual-Gate Organic Field-Effect Transistors as Potentiometric Sensors in Aqueous Solution
article
Buried electrodes and protection of the semiconductor with a thin passivation
layer are used to yield dual-gate organic transducers. The process technology
is scaled up to 150-mm wafers. The transducers are potentiometric sensors
where the detection relies on measuring a shift in the threshold voltage
caused by changes in the electrochemical potential at the second gate
dielectric. Analytes can only be detected within the Debye screening length.
The mechanism is assessed by pHmeasurements. The threshold voltage shift
depends on pH as DVth¼(Ctop/Cbottom)T58mV per pH unit, indicating that
the sensitivity can be enhanced with respect to conventional ion-sensitive
field-effect transistors (ISFETs) by adjusting the ratio of the top and bottom
gate capacitances. Remaining challenges and opportunities are discussed.
layer are used to yield dual-gate organic transducers. The process technology
is scaled up to 150-mm wafers. The transducers are potentiometric sensors
where the detection relies on measuring a shift in the threshold voltage
caused by changes in the electrochemical potential at the second gate
dielectric. Analytes can only be detected within the Debye screening length.
The mechanism is assessed by pHmeasurements. The threshold voltage shift
depends on pH as DVth¼(Ctop/Cbottom)T58mV per pH unit, indicating that
the sensitivity can be enhanced with respect to conventional ion-sensitive
field-effect transistors (ISFETs) by adjusting the ratio of the top and bottom
gate capacitances. Remaining challenges and opportunities are discussed.
TNO Identifier
441292
Source
Advanced Materials, pp. 898-905.
Pages
898-905
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