Multilevel information storage in ferroelectric polymer memories

article







Tripathi, A.K.

Breemen, A.J.J.M. van

Shen, J.

Gao, Q.

Ivan, M.G.

Reimann, K.

Meinders, E.R.

Gelinck, G.H.
Multibit memory devices based on the ferroelectric copolymer P(VDF-TrFE) (poly-(vinylidenefluoride-trifluoroethylene)) are presented. Multilevel microstructures are fabricated by thermal imprinting of spin-coated ferroelectric polymer film using a rigid Si template. Multibit storage in capacitors and thin-film transistor memory is realized by implementing imprinted ferroelectric polymer films as the insulator and gate dielectric layers, respectively. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Topics



ferroelectric polymersimprintingmultibit storagenon-volatile memories
TNO Identifier
436602
Repository link
https://resolver.tno.nl/uuid:85b43d40-a181-44b0-9716-bdc1bdb9f447
ISSN
09359648
Source
Advanced Materials, 23(36), pp. 4146-4151.
Collation
6 p., resp. 10 p.
Pages
4146-4151
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