Characterization of the influence of strain on the optical properties of waveguides and microresonators in silicon-on-insulator technology
conference paper
Silicon-on-insulator (SOI) technology has become one of the focus platforms for photonic integrated circuits (PICs). The CMOS technology opens the possibility for reliable mass fabrication of cost-effective photonic circuits. Recently there has been a growing interest in direct optical sensing of, for example, temperature, pressure or strain, using microring resonators [1,2]. Taillaert et. al. [3] proposed the use of a microring resonator as a strain gauge. Amemiya et. al. [4] reported on the effect of strain on SOI ring resonators. However, the strong lateral confinement of the light due to the high refractive index contrast in SOI waveguides and its corresponding modal dispersion was not taken into account. To the best of our knowledge, we are the first to present experimental results and understanding of the effects of an applied strain S in the effective index ne in a SOI-PIC. © 2011 IEEE.
Topics
Applied strainCMOS technologyEffect of strainEffective indexHigh refractive index contrastsLateral confinementMass fabricationMicro resonatorsMicroring resonatorModal dispersionOptical sensingPhotonic circuitsPhotonic integrated circuitsRing resonatorSilicon on insulatorSilicon-on-insulatorsSOI waveguidesStrain gaugeCMOS integrated circuitsElectron opticsGagesOptical resonatorsOpticsPhotonic integration technologyQuantum electronicsRefractive indexWaveguidesSilicon on insulator technology
TNO Identifier
435993
ISBN
9781457705335
Article nr.
5943062
Source title
2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011, 22 May 2011 through 26 May 2011, Munich
Collation
1 p.
Files
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