Validity of the einstein relation in disordered organic semiconductors
article
It is controversial whether energetic disorder in semiconductors is already sufficient to violate the classical Einstein relation, even in the case of thermal equilibrium. We demonstrate that the Einstein relation is violated only under nonequilibrium conditions due to deeply trapped carriers, as in diffusion-driven current measurements on organic single-carrier diodes. Removal of these deeply trapped carriers by recombination unambiguously proves the validity of the Einstein relation in disordered semiconductors in thermal (quasi)equilibrium. © 2011 American Physical Society.
TNO Identifier
434662
ISSN
00319007
Source
Physical Review Letters, 107(6)
Article nr.
No.: 066605
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