Roll-to-roll UV imprint for bottom-up transistor fabrication
article
We propose a design to fabricate transistors on flexible substrates in a bottom-up fashion using R2R UV-imprint lithography. The design consists of a template composed of multilevel as well as gray level features, the later used to facilitate device interconnection. A hard mold is fabricated by LBR and a flexible Ni replica is done using Ni electroplating. The flexible stamp is used in the R2R UV imprint machine with PET as flexible substrate. Imprints were performed at a speed of 0.35m/min and show a high level of replication of the multilevel as well as gray level features.
TNO Identifier
434660
ISSN
09149244
Source
Journal of Photopolymer Science and Technology, 24(1), pp. 43-45.
Publisher
Wiley
Collation
3 p.
Pages
43-45
Files
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