Photocrosslinking of ferroelectric polymers and its application in three-dimensional memory arrays
article
An I-line photolithography process for ferroelectric polymers is developed. It is based on photocrosslinking using a bisazide photoinitiator. Patterned layers were realized down to 1-2 µm resolution. Crosslinking yields a close-to-insoluble ferroelectric polymer network that counter intuitively has similar ferroelectric properties as a noncrosslinked film. The negative process is used to stack ferroelectric films on top of each other to make three-dimensional cross-bar arrays of nonvolatile ferroelectric capacitor memories. © 2011 American Institute of Physics.
Topics
TNO Identifier
430686
ISSN
1941420X
Source
APL: Organic Electronics and Photonics, 4(5)
Article nr.
No.: 183302
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