Charge transport in solution processable polycrystalline dual-gate organic field effect transistors
article
Dual gate organic thin film transistors based on solution processable fluorinated 5,11 bis(triethylsilylethynyl) anthradithiophene semiconductor were fabricated. Top (Teflon, εr =2.1) and bottom (SiO2, εr =3.9) gate dielectrics with different dielectric constants were chosen. Top gate mobilities >1 cm2 /Vs and bottom gate mobilities >0.1 cm2/V s were achieved. Temperature dependent mobility measurements show thermally activated charge transport and a comparative analysis is performed in the framework of two models representing polaron hopping as well as hopping in Gaussian density of states (DOS), respectively. © 2011 American Institute of Physics.
TNO Identifier
430118
ISSN
0003-6951
Source
Applied Physics Letters, 98(20)
Article nr.
No.: 202106
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