Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application
article
In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 µm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The technology is demonstrated with circuit building blocks relevant for radio frequency identification applications such as high-frequency functional code generators and efficient rectifiers. The integration level is about 300 transistors. © 2011 American Institute of Physics.
Topics
Building blockesField-effect mobilitiesFunctional codesHigh frequency HFIndium zinc oxidesIntegration levelsLow processing temperatureLow-voltagePlastic foilsAmorphous filmsElectric rectifiersGalliumIndiumLogic circuitsProcessingRadio frequency identification (RFID)Radio wavesSwitching circuitsThin film transistorsThin filmsZincZinc oxideThin film circuits
TNO Identifier
429747
ISSN
0003-6951
Source
Applied Physics Letters, 98(16)
Article nr.
No.: 162102
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