Ultrafast atomic layer deposition of alumina layers for solar cell passivation
conference paper
An ultrafast atomic layer deposition technique is presented, based on the spatial separation of the half-reactions, with which alumina layers can be deposited with deposition rates of more than 1 nm/s. The deposition rate is limited by the water half-reaction, for which a kinetic model has been developed. The alumina layers showed excellent passivation of silicon wafers for solar cell applications. Based on this concept, a high throughput ALD deposition tool is being developed towards throughputs of up to 3000 wafers/hr. ©The Electrochemical Society.
TNO Identifier
428153
ISSN
19385862
ISBN
9781566778213
Source title
6th Symposium on Atomic Layer Deposition Applications - 218th ECS Meeting, 10 October 2010 through 15 October 2010, Las Vegas, NV, USA. Conference code: 84178
Collation
4 p.
Pages
419-427
Files
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