Beyond the Nernst-limit with dual-gate ZnO ion-sensitive field-effect transistors
article
The sensitivity of conventional ion-sensitive field-effect transistors (ISFETs) is limited to 59 mV/pH, which is the maximum detectable change in electrochemical potential according to the Nernst equation. Here we demonstrate a transducer based on a ZnO dual-gate field-effect transistor that breaches this boundary. To enhance the response to the pH of the electrolyte, a self-assembled monolayer has been used as a top gate dielectric. The sensitivity scales linearly with the ratio between the top and bottom gate capacitances. The sensitivity of our ZnO ISFET of 22 mV/pH is enhanced by more than two orders of magnitude up to 2.25 V/pH. © 2011 American Institute of Physics.
TNO Identifier
427584
ISSN
0003-6951
Source
Applied Physics Letters, 98(4)
Article nr.
No.: 043502
Collation
3 p.
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