Transmission electron microscopy of transparent conductive oxide films made by atmospheric pressure chemical vapor deposition
article
The properties of crystalline films are strongly dependent on the morphology development during the first stages of growth, that is, the nucleation and growth of the first crystallites. The ideal method to investigate such films at atomic resolution is transmission electron microscopy (TEM). However, this technique usually requires extensive sample preparation. In this study we present a simple method to investigate thin film morphology with TEM. The key to this approach is the use of TEM membranes as growth substrates. As an illustration we describe fine grains of SnO2 deposited on these TEM membranes by atmospheric pressure chemical vapor deposition. © 2011 American Institute of Physics.
TNO Identifier
427572
ISSN
0003-6951
Source
Applied Physics Letters, 98(5)
Article nr.
No.: 051907
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