Model for nanopillar growth by focused helium ion-beam-induced deposition
article
An analytical model for the growth of nanopillars by helium ion-beam-induced deposition is presented and compared to experimental data. This model describes the competition between pillar growth in vertical and lateral directions. It assumes that vertical growth is induced by incident primary ions and type-1 secondary electrons, whereas lateral growth is induced by scattered ions and type-2 secondary ions. An essential element of the model is the notion that depletion of adsorbed precursor molecules occurs only at the pillars' apex. Depletion impedes vertical growth at the apex, allowing more time for lateral outgrowth of the pillar's sidewalls. The model describes qualitatively the trends in measured vertical, lateral, and volumetric growth rates of PtC pillars as functions of the ion-beam current. It can be used to design growth experiments and Monte Carlo simulations.
TNO Identifier
426098
ISSN
10711023
Source
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28(6)
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