A 3-14 GHz pseudo-differential distributed low noise amplifier
conference paper
A 3-14 GHz pseudo-differential distributed low noise amplifier, henceforth referred to as the distributed amplifier (DA), is reported. The DA is realized in the WIN PL15-10 process, which is a 0.15 μm Al<sub>0.3</sub>Ga <sub>0.7</sub>As/In<sub>0.5</sub>Ga<sub>0.5</sub>As low-noise depletion-mode pseudomorphic high electron mobility transistor (pHEMT) process. The DA features 10 pseudo-differential cascode pair unit cells. The chip also features V <sub>GS</sub> and V<sub>G2</sub> gate bias circuits for threshold voltage, V<sub>T</sub> offset compensation. Measured values for the figures of merit are: a 3-14 GHz bandwidth, 17 ± 1 dB of small-signal gain, a < 2.3 dB noise figure, a 7gt; 10 dB input and output return loss, and a one dB compression point of better than 15 dBm at 10 GHz. The DA draws 200 mA from a 3 V supply, and its dimensions are: 3.1 × 2.4 mm<sup>2</sup>.
TNO Identifier
425683
Source title
13th European Microwave Week 2010: Connecting the World, EuMIC 2010, 26 - 1 October 2010, Paris, France
Pages
337-340
Files
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