Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide
article
Using aluminum oxide (<sub>Al2</sub> O<sub>3</sub>) films deposited by high-rate spatial atomic layer deposition (ALD), we achieve very low surface recombination velocities of 6.5 cm/s on p -type and 8.1 cm/s on n -type crystalline silicon wafers. Using spatially separated reaction zones instead of the conventional time-sequenced precursor dosing enables growth rates up to 70 nm/min, whereas conventional ALD limits the growth rate to <2 nm/min. The excellent passivation level is predominantly assigned to a high negative fixed charge density of Qf =- (4±1) × 1012 cm-2 in the Al2 O<sub>3</sub> films. We demonstrate an excellent thermal stability of the passivation quality. © 2010 American Institute of Physics.
Topics
Aluminum oxidesCrystalline silicon wafersHigh rateNegative fixed chargeP-typePrecursor dosingReaction zonesSurface recombination velocitiesThermal stabilityUltra-fastAluminumAtomic layer depositionOxidesPassivationReaction ratesSemiconducting silicon compoundsSilicon wafersThermodynamic stabilityAluminum coatings
TNO Identifier
425170
ISSN
0003-6951
Source
Applied Physics Letters, 97(16)
Article nr.
No.: 162103
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