A new model for electron movement in a thick film resistor and its application to analysis of the structure and conduction mechanism in these resistors
article
A new model has been developed to explain the strain behaviour of thick film resistors. In this model, the electron moves in a meandering way through the resistor. By measuring the strain sensitivity and applying the meander model on it, information is obtained about the structure of the thick film resistor and the strain sensitivity of the micro-electron paths in the resistor. The latter can be a useful tool in testing models that describe conduction mechanisms in thick film resistors. In this research, measurements on the strain sensitivity of thick film resistors were made using a four-point-bending bridge and the four-point-resistance measurement was made using special probes. Long, narrow enamel-coated steel substrates were used to enhance the accuracy of the measurements. ?? 1987.
TNO Identifier
230421
ISSN
00406090
Source
Thin Solid Films, 152(3), pp. 487-497.
Pages
487-497
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