High-speed spatial atomic-layer deposition of aluminum oxide layers for solar cell passivation

article





Poodt, P.W.G.

Lankhorst, A.M.

Roozeboom, F.

Spee, C.I.M.A.

Maas, D.

Vermeer, A.
In this Communication we show that with spatially separated ALD of Al2O3 growth rates of 1.2 nm s-1 can be achievd, showing excellent surface passivation (surface recombination velocities of <2 cm s-1). This implies a revolutionary breakthrough in industrial throughput ALD of Al2O3 passivation of silicon solar cells.
Topics








Aluminum oxidesCell surfacesHigh-speedRecombination velocityAtomic layer depositionCell membranesPassivationSolar cellsAluminum coatings
TNO Identifier
409274
Repository link
https://resolver.tno.nl/uuid:95883ced-f006-4bd6-b2c2-04cf5c8b20c9
ISSN
09359648
Source
Advanced Materials, 22(32), pp. 3564-3567.
Pages
3564-3567
Files
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