Holographic method for detecting amplitude and phase-shift errors and features in EUV ML reticle blanks
conference paper
A method for actinic inspection of EUV mask blanks is described, in which EUV photoresist is applied to the blank, flood exposed with EUV, and developed. The effect of both phase and reflectivity defects on the reticle is described in terms of a variation in intensity and phase of the standing wave in the resist. Thin film simulations are performed to evaluate the contrast generating mechanism for various blank defects. The method was introduced earlier by others 3 and was shown in experiments to transfer reflectivity defects on the reticle to the developed resist. We propose to reevaluate the technique with current state-of-the-industry capabilities of resist processing, contamination control and inspection. Various possible development directions are described. © 2010 Copyright SPIE - The International Society for Optical Engineering.
Topics
TNO Identifier
364420
ISSN
0277786X
ISBN
9780819480507
Article nr.
No.: 763622
Source title
Extreme Ultraviolet (EUV) Lithography, 22-25 February 2010, San Jose, CA, USA
Collation
8 p.