Low-cost high-efficient 10-Watt X-band high-power amplifier
conference paper
A high power X-band amplifier with an output power over 10 Watts and a Power Added Efficiency (PAE) in excess of 40 percent has been developed. The design was fabricated in a 0.25 μm pHEMT GaAs process (WIN Semiconductor PP25-01).
The small die area in combination with a 6-inch wafer technology provides the possibility for low cost production of a high performance X-band T/R chipset.
The small die area in combination with a 6-inch wafer technology provides the possibility for low cost production of a high performance X-band T/R chipset.
TNO Identifier
328769
Article nr.
No.: 5386072
Source title
IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, 2009. COMCAS 2009, 9-11 November, 2009, Tel Aviv, Israel
Pages
1-6
Files
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