Method for improving the aspect ratio of ultrahigh-resolution structures in negative electron-beam resist
article
A method for improving the aspect ratio of ultrahigh-resolution structures in negative electron-beam resist is provided for enhanced pattern-transfer capabilities. The essence of the proposed method is to form a protective "cap" on top of the resist structure by means of electron-beam-induced deposition (EBID) in a self-aligned approach. This is implemented by a combination of electron-beam lithography and EBID during exposure of the resist material in the presence of a precursor gas. The results of the proposed method using hydrogen silsesquioxane resist material are presented and discussed, including various attempts to further optimize this method. © 2009 American Vacuum Society.
TNO Identifier
273936
ISSN
10711023
Source
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(6), pp. 2503-2507.
Pages
2503-2507
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