Robust X-band LNAs in AlGaN/GaN technology
conference paper
Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realise robust receiver components. This paper presents the design, realisation and measurement of two robust AlGaN/GaN low noise amplifiers. The two versions have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology and in the QinetiQ AlGaN/GaN coplanar waveguide technology. Both LNAs operate at X-band. An input power handling of >41 dBm for the first iteration design of the Alcatel-Thales III-V lab version has been published [3][5]. The designs and measurement results of the two realised low noise amplifiers are presented in this paper. The results show that gallium nitride is a suitable technology for robust receiver design.
TNO Identifier
272840
ISBN
9782874870125
Publisher
European Microwave Association EuMA
Source title
European Microwave Week 2009 - EuMW 2009 - 4th European Microwave Integrated Circuits Conference - EuMIC 2009, 28 September - 2 October 2009, Rome, Italy
Place of publication
Louvain-la-Neuve
Pages
101-104