Robust AlGaN/GaN low noise amplifier MMICs for C-, Ku- and Ka-band space applications
conference paper
The high power capabilities in combination with the low noise performance of Gallium Nitride (GaN) makes this technology an excellent choice for robust receivers. This paper presents the design and measured results of three different LNAs, which operate in C-, Ku-, and Ka-band. The designs are realized in 0.25 μm and 0.15 μm AlGaN/GaN microstrip technology. The measured noise figure is 1.2, 1.9 and 4.0 dB for the C-, Ku-, and Ka-frequency band respectively. The robustness of the LNAs have been tested by applying CW source power levels of 42 dBm, 42 dBm and 28 dBm for the C-band, Ku-band and Ka-band LNA respectively. No degradation in performance has been observed.
TNO Identifier
272838
ISSN
15508781
ISBN
9781424451913
Source title
2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2009 - Integrated Circuits in GaAs, InP, SiGe, GaN, and Other Compound Semiconductors, 11 - 14 October 2009, Greensboro, NC, USA
Pages
1-4
Files
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