Gallium Nitride MMICs for mm-Wave Power Operation
article
In this paper a Gallium Nitride MMIC technology for high-power amplifiers between 27 GHz and
101 GHz based on 150 nm- and 100 nm-gate technologies is presented. The GaN HEMT MMICs are
designed using coplanar waveguide transmission-line-technology on 3-inch semi-insulating SiC substrates.
The measured output power of several dual-stage GaN HPAMMICs amounts to 33–34 dBm at 27–28 GHz
with a reproducible measured small-signal gain of 10 dB. Optimized GaN test structures matched to 27 GHz
provide a maximumPAE of 28%with an associate output power of2 W/mm at 27 GHz in cw-operation. In
pulsed operation with 10%duty-cycle, a PAE level of >35% is achieved with a power density of 4.5 W/mm,
again at 27 GHz. GaN HEMT MMICs at 60 GHz provide gain levels of >6 dB per amplifier stage, while a
MMIC at 101 GHz reaches 3.2 dB of gain.
101 GHz based on 150 nm- and 100 nm-gate technologies is presented. The GaN HEMT MMICs are
designed using coplanar waveguide transmission-line-technology on 3-inch semi-insulating SiC substrates.
The measured output power of several dual-stage GaN HPAMMICs amounts to 33–34 dBm at 27–28 GHz
with a reproducible measured small-signal gain of 10 dB. Optimized GaN test structures matched to 27 GHz
provide a maximumPAE of 28%with an associate output power of2 W/mm at 27 GHz in cw-operation. In
pulsed operation with 10%duty-cycle, a PAE level of >35% is achieved with a power density of 4.5 W/mm,
again at 27 GHz. GaN HEMT MMICs at 60 GHz provide gain levels of >6 dB per amplifier stage, while a
MMIC at 101 GHz reaches 3.2 dB of gain.
Topics
TNO Identifier
93976
Source
Frequenz, 63(3-4), pp. 51-54.
Pages
51-54
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