Nitric acid pretreatment for the passivation of boron emitters for n-type base silicon solar cells
article
We have developed a simple method to passivate industrially produced boron-doped emitters for n-type base silicon solar cells using an ultrathin __1.5 nm_ silicon dioxide layer between the silicon emitter and the silicon nitride antireflection coating film. This ultrathin oxide is grown at room temperature by soaking the silicon wafers in a solution of nitric acid prior to the deposition of the silicon nitride antireflection coating film. The n-type solar cells processed in such a way demonstrate a conversion efficiency enhancement of more than 2% absolute over the solar cells passivated without the silicon dioxide layer. Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters Vol. 92, p. 63510 (2008)
TNO Identifier
845906
Publisher
ECN
Collation
3 p.
Place of publication
Petten
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