Defect transformation in intentionally contaminated FZ silicon during low temperature annealing
conference paper
Silicon samples intentionally contaminated with iron during growth were investigated in the as-grown state and after a prolonged low temperature anneal at around 300 C with different characterisation techniques, i.e. Deep Level Transient Spectroscopy (DLTS), Temperature Dependent Lifetime Spectroscopy (TLDS) and Photoluminescence (PL) spectroscopy. A defect transformation was found, changing the type of defect from iron-related complexes to interstitial iron.
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TNO Identifier
821517
Publisher
ECN
Source title
23rd European Photovoltaic Solar Energy Conference and Exhibition, Valencia, Spain, 1-5 september 2008.
Collation
5 p.
Place of publication
Petten
Pages
5 p.
Files