Interdigitated Back Contact Amorphous/crystalline Silicon Heterojunction Solar Cells
conference paper
This paper shows how the amorphous/crystalline silicon technology can be implemented in the interdigitated back contact solar cell design. The entire self-aligned mask and photolithography-free process is performed at temperature below 300 ??C with the aid of one metallic mask to create the interdigitated pattern. An open-circuit voltage of 687 mV has been measured on a p-type mono-crystalline silicon wafer. We show that the uniformity of the deposited amorphous silicon layers is not influenced by the mask-assisted deposition process and that the alignment is feasible. Moreover, this paper investigates the photocurrent limiting factors by one-dimensional modelling and quantum efficiency measurements.
TNO Identifier
821471
Publisher
ECN
Source title
17th International Photovoltaic Science and Engineering Conference (PVSEC17), Fukuoka, Japan, 3-7 december 2007.
Collation
2 p.
Place of publication
Petten
Pages
2 p.
Files