N-type silicon solar cell with Al back junction: results and modeling
conference paper
We present results on n-type silicon cell process development based on the Al-back junction concept using low cost fabrication techniques. Excellent results have been obtained on floatzone silicon wafers with efficiency in excess of 16.4%. Moreover, model calculations allow us to identify the potential for further enhancement of the cell efficiency above 17.5% by improving front surface passivation. After some optimization, high efficiencies may be conceivable on n-type multicrystalline substrates as well.
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TNO Identifier
821358
Publisher
ECN
Source title
16th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Denver CO, USA, 6-9 augustus 2006.
Collation
5 p.
Place of publication
Petten
Pages
5 p.
Files