Unified description of potential profiles and electrical transport
in unipolar and ambipolar organic field-effect transistors
article
Validation of models for charge transport in organic transistors is fundamentally important for their technological
use. Usually current-voltage measurements are performed to investigate organic transistors. In situ
scanning Kelvin probe microscopy measurements provide a powerful complementary technique to distinguish
between models based on band and hopping transports. We perform combined current-voltage and Kelvin
probe microscopy measurements on unipolar and ambipolar organic field-effect transistors. We demonstrate
that by this combination we can stringently test these two different transport models and come up with a
unified description of charge transport in disordered organic semiconductors.
use. Usually current-voltage measurements are performed to investigate organic transistors. In situ
scanning Kelvin probe microscopy measurements provide a powerful complementary technique to distinguish
between models based on band and hopping transports. We perform combined current-voltage and Kelvin
probe microscopy measurements on unipolar and ambipolar organic field-effect transistors. We demonstrate
that by this combination we can stringently test these two different transport models and come up with a
unified description of charge transport in disordered organic semiconductors.
TNO Identifier
441451
Source
Physical review, 23
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