Determining carrier mobility with a metal–insulator–semiconductor structure

article






Stallinga, P.

Benvenho, A.R.V.

Smits, E.C.P.

Mathijssen, S.G.J.

Colle, M.

Gomes, H.L.

Leeuw, D.M. de
The electron and hole mobility of nickel-bis(dithiolene) (NiDT) are determined in a metal– insulator–semiconductor (MIS) structure using admittance spectroscopy. The relaxation times found in the admittance spectra are attributed to the diffusion time of carriers to reach the insulator interface and via Einstein’s relation this yields the mobility values.
TNO Identifier
441428
Repository link
https://resolver.tno.nl/uuid:121d2f86-c8b6-4e1c-b961-5a7074b94773
Source
Organic Electronics, pp. 735-739.
Pages
735-739
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