Near-Infrared Light-Emitting Ambipolar Organic Field-Effect Transistors
article
Recent years have seen tremendous advances in the area of organic-based optoelectronic devices and several applications previously envisioned are now reaching the stage of commercial exploitation.[1] Organic field-effect transistors (OFETs) are among these devices and can be arguably viewed as a possible alternative to their inorganic counterparts in a range of low-cost high-volume applications.[2] Traditionally, OFETs have been used as pixel switches in active matrix displays and as the building blocks of integrated circuits where mechanical flexibility and low-cost fabrication are two prerequisites.[1] Recently, novel bifunctional OFETs have also made their debut where, in addition to their classical current-modulating function, light-emission from within the electroactive channel has been reported.[3] Such electro-optical transistors are interesting for two reasons: First, the ability of combining optoelectronic functionalities in a single device will increase the number of potential applications, like integrated circuits for
signal-processing that involve both optical and electrical signals. Secondly, it will provide an ideal experimental platform for the study of various fundamental physical processes (optical and electronic) characteristic in organic semiconductors.
signal-processing that involve both optical and electrical signals. Secondly, it will provide an ideal experimental platform for the study of various fundamental physical processes (optical and electronic) characteristic in organic semiconductors.
TNO Identifier
441294
Source
Advanced Materials, pp. 734-738.
Pages
734-738
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