Protection Circuit for High Power Amplifiers Operating Under Mismatch Conditions
conference paper
A protection circuit is developed which protects transistors in the output stage of a High Power Amplifier against voltage breakdown as a result of mismatch. The circuit is applied in an S-band and X-band High Power Amplifier and measured under various mismatch conditions. The devices have been developed in the 6-inch 0.5 μm GaAs power pHEMT process (PP50-11) of WIN Semiconductors
TNO Identifier
222471
Publisher
European Microwave Association EuMA
Source title
European Microwave Week EuMW 2007 - Proceedings of the 2nd European Microwave Integrated Circuits Conference - EuMIC 2007, 8-10 October 2007, ICM - Munich International Congress Centre, Munich, Germany
Place of publication
Louvain-la-Neuve
Pages
158-161