A cost-effective 10 Watt X-band high power amplifier and 1 watt driver amplifier chip-set
other
An X-band power amplifier chip-set for communication and radar applications has been developed and tested. The chip set consists of a two- and three-stage high-power amplifier, which have an output power of 10 Watt over the 8.5 - 10.5 GHz frequency band and a driver amplifier with an output power of more than 1 Watt over the 8.5 - 11.5 GHz frequency band. The amplifiers have been developed in the 6-inch 0.5 μm power pHEMT process (PP50-10) of WIN Semiconductors. The use of this process in combination with the used innovative design approach results in a cost effective chip set, which is competitive in both performance and price with any available solution.
Topics
TNO Identifier
222307
Publisher
EuMA
Source title
8th European Microwave Week EUMW, 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, GAAS 2005, 3-7 october 2005, Paris, France
Place of publication
Louvain-la-Neuve
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